Thermal stability of polycrystalline silicon/metal oxide interfaces

被引：2

作者：

Callegari, A ^{[1
]}

Gousev, E ^{[1
]}

Zabel, T ^{[1
]}

Lacey, D ^{[1
]}

Gribelyuk, M ^{[1
]}

Jamison, P ^{[1
]}

机构：

[1] IBM Corp, Microelect Div, Semicond Res & Dev Ctr, Hopewell Jct, NY 12533 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 22期

关键词：

D O I：

10.1063/1.1526150

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The thermal stability of polycrystalline silicon (poly-Si)/ZrO2 interface was significantly enhanced when the poly-Si was plasma deposited using silane heavily diluted in He. With regard to this process, transmission electron microscopy shows a sharp poly-Si/ZrO2 interface that is stable at 1000 degreesC. When the poly-Si was deposited by chemical vapor deposition using undiluted silane gas, transmission electron microscopy shows strong reactions at the poly-Si/ZrO2 interface when annealed at 1000 degreesC. The increased stability can be attributed to He dilution, which may prevent hydrogen from reducing the metal oxide. Another explanation may be directly related to He-excited plasma, which is known to produce denser and more stable films. (C) 2002 American Institute of Physics.

引用

页码：4157 / 4158

页数：2

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