Characterization of sublattice-reversed GaAs by reflection high energy electron diffraction and transmission electron microscopy

被引：10

作者：

Koh, S

Kondo, T

Ishiwada, T

Sawada, H

Ichinose, H

Shoji, I

Ito, R

机构：

[1] Univ Tokyo, Fac Engn, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan

[2] Univ Tokyo, Fac Engn, Dept Mat Sci, Bunkyo Ku, Tokyo 1138656, Japan

[3] Meiji Univ, Dept Phys, Tama Ku, Kawasaki, Kanagawa 2148571, Japan

来源：

PHYSICA E | 2000年 / 7卷 / 3-4期

关键词：

sublattice reversal; domain inversion; molecular beam epitaxy; antiphase domain; grain boundary; frequency conversion; quasi-phase matching;

D O I：

10.1016/S1386-9477(00)00080-1

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Sublattice-reversed GaAs crystals grown by the lattice-matched GaAs/Ge/GaAs (100) and (111) sublattice reversal epitaxy have been characterized by reflection high-energy electron diffraction and cross-sectional transmission electron microscopy. The sublattice reversal in the GaAs/Ge/GaAs (100) system has been verified to be assisted by self-annihilation of the antiphase domains generated at the GaAs/Ge interface. The sublattice reversal in the GaAs/Ge/GaAs (111) system seems to result from the unique structure of the As-terminated Ge (111) surfaces. Unusual (111) Sigma 3 grain boundaries have been observed in the sublattice-reversed GaAs(111) crystal. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：876 / 880

页数：5

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