Room-temperature scanning Hall probe microscope (RT-SHPM) imaging of garnet films using new high-performance InSb sensors

被引:29
作者
Oral, A [1 ]
Kaval, M
Dede, M
Masuda, H
Okamoto, A
Shibasaki, I
Sandhu, A
机构
[1] Bilkent Univ, Dept Phys, TR-06533 Bilkent, Turkey
[2] Toei Kogyo Ltd, Machida, Tokyo 1940035, Japan
[3] Asahikasei Corp, Fuji, Shizuoka 4168501, Japan
[4] Tokai Univ, Dept Elect & Elect Engn, Hiratsuka, Kanagawa 2591292, Japan
关键词
Hall effect; scanning Hall probe microscopy;
D O I
10.1109/TMAG.2002.803607
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High-performance InSb micro-HaIl sensors were fabricated by optical lithography and incorporated in a room-temperature scanning Hall probe microscope for imaging of localized magnetic fluctuations in close proximity to the surfaces of crystalline uniaxial garnet films. The room-temperature noise figure of the InSb sensors was 6-10 mG/v/Hz, which is an order of magnitude better than GaAs-AlGaAs two-dimensional electron gas sensors used to date.
引用
收藏
页码:2438 / 2440
页数:3
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