Local Charge Trapping in Conjugated Polymers Resolved by Scanning Kelvin Probe Microscopy

被引:61
作者
Hallam, Toby [1 ]
Lee, MiJung [1 ]
Zhao, Ni [1 ]
Nandhakumar, Iris [2 ]
Kemerink, Martijn [1 ,3 ]
Heeney, Martin [4 ]
McCulloch, Iain [4 ]
Sirringhaus, Henning [1 ]
机构
[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 OHE, England
[2] Univ Southampton, Sch Chem, Southampton SO17 1BJ, Hants, England
[3] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
[4] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AZ, England
基金
英国工程与自然科学研究理事会;
关键词
FIELD-EFFECT TRANSISTORS; SEMICONDUCTING POLYMERS; MOBILITY; REAL;
D O I
10.1103/PhysRevLett.103.256803
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The microstructure of conjugated polymers is heterogeneous on the length scale of individual polymer chains, but little is known about how this affects their electronic properties. Here we use scanning Kelvin probe microscopy with resolution-enhancing carbon nanotube tips to study charge transport on a 100 nm scale in a chain-extended, semicrystalline conjugated polymer. We show that the disordered grain boundaries between crystalline domains constitute preferential charge trapping sites and lead to variations on a 100 nm scale of the carrier concentration under accumulation conditions.
引用
收藏
页数:4
相关论文
共 18 条
[1]   Noncontact potentiometry of polymer field-effect transistors [J].
Bürgi, L ;
Sirringhaus, H ;
Friend, RH .
APPLIED PHYSICS LETTERS, 2002, 80 (16) :2913-2915
[2]   Real versus measured surface potentials in scanning Kelvin probe microscopy [J].
Charrier, Dimitri S. H. ;
Kemerink, Martijn ;
Smalbrugge, Barry E. ;
de Vries, Tjibbe ;
Janssen, Rene A. J. .
ACS NANO, 2008, 2 (04) :622-626
[3]   Controlling the Orientation of Terraced Nanoscale "Ribbons" of a Poly(thiophene) Semiconductor [J].
DeLongchamp, Dean M. ;
Kline, R. Joseph ;
Jung, Youngsuk ;
Germack, David S. ;
Lin, Eric K. ;
Moad, Andrew J. ;
Richter, Lee J. ;
Toney, Michael F. ;
Heeney, Martin ;
McCulloch, Iain .
ACS NANO, 2009, 3 (04) :780-787
[4]   Voltage-induced metal-insulator transition in polythiophene field-effect transistors [J].
Dhoot, AS ;
Wang, GM ;
Moses, D ;
Heeger, AJ .
PHYSICAL REVIEW LETTERS, 2006, 96 (24)
[5]  
Hafner JH, 2001, J PHYS CHEM B, V105, P743, DOI [10.1021/jp003948o, 10.1021/jp003498o]
[6]   A scanning Kelvin probe study of charge trapping in zone-cast pentacene thin film transistors [J].
Hallam, T. ;
Duffy, C. M. ;
Minakata, T. ;
Aando, M. ;
Sirringhaus, H. .
NANOTECHNOLOGY, 2009, 20 (02)
[7]   Undoped polythiophene field-effect transistors with mobility of 1 cm2 V-1 s-1 [J].
Hamadani, B. H. ;
Gundlach, D. J. ;
McCulloch, I. ;
Heeney, M. .
APPLIED PHYSICS LETTERS, 2007, 91 (24)
[8]   Critical role of side-chain attachment density on the order and device performance of polythiophenes [J].
Kline, R. Joseph ;
DeLongchamp, Dean M. ;
Fischer, Daniel A. ;
Lin, Eric K. ;
Richter, Lee J. ;
Chabinyc, Michael L. ;
Toney, Michael F. ;
Heeney, Martin ;
McCulloch, Iain .
MACROMOLECULES, 2007, 40 (22) :7960-7965
[9]   Controlling the field-effect mobility of regioregular polythiophene by changing the molecular weight [J].
Kline, RJ ;
McGehee, MD ;
Kadnikova, EN ;
Liu, JS ;
Fréchet, JMJ .
ADVANCED MATERIALS, 2003, 15 (18) :1519-+
[10]   Charge trapping at the dielectric of organic transistors visualized in real time and space [J].
Mathijssen, Simon G. J. ;
Kemerink, Martijn ;
Sharma, Abhinav ;
Coelle, Michael ;
Bobbert, Peter A. ;
Janssen, Rene A. J. ;
de Leeuw, Dago M. .
ADVANCED MATERIALS, 2008, 20 (05) :975-+