An Emergent Change of Phase for Electronics

被引：251

作者：

Takagi, Hidenori ^{[1
,2
]}

Hwang, Harold Y. ^{[1
]}

机构：

[1] Univ Tokyo, Dept Adv Mat, Kashiwa, Chiba 2778561, Japan

[2] RIKEN, Adv Sci Inst, Wako, Saitama 3510198, Japan

来源：

SCIENCE | 2010年 / 327卷 / 5973期

关键词：

TRANSITION; RESISTANCE; FILMS; STATES;

D O I：

10.1126/science.1182541

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Correlated electrons in transition metal oxides can form a variety of electronic phases. The phase change between these various states gives rise to novel device functions, including sensing, signal conversion, and nonvolatile memory, and is now at the frontier of research on "emergent research device materials." Those oxide devices may have an advantage over conventional semiconductor devices for added functionality and future downsizing to the nanoscale. The elucidation of the microscopic physics behind their operation is a key step for further development.

引用

页码：1601 / 1602

页数：2

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