Characteristics of homoepitaxial heavily boron-doped diamond films from their Raman spectra

被引：109

作者：

Pruvost, F ^{[1
]}

Bustarret, E ^{[1
]}

Deneuville, A ^{[1
]}

机构：

[1] CNRS, Etud Proprietes Elect Solides Lab, F-38042 Grenoble 9, France

来源：

关键词：

boron doping; diamond; homoepitaxy; impurity band; metallic conductivity; Raman scattering;

D O I：

10.1016/S0925-9635(99)00241-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

As the boron incorporation level and the wavelength of the exciting laser were varied, we observed systematic modifications of the Raman spectra of homoepitaxial diamond films. A pronounced change in the lineshape of the zone-center optical Raman peak as well as a wide and structured signal at lower wavenumbers appeared simultaneously when the boron incorporation was increased above an abrupt threshold around 3 x 10(20) cm(-1). This threshold was found to depend on the excitation laser wavelength. Possible origins for the wide peaks at 500 and 1225 cm(-1) are also discussed. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：295 / 299

页数：5

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