Observation of the Si(111) 7x7 atomic structure using non-contact scanning nonlinear dielectric microscopy

被引：27

作者：

Hirose, Ryusuke ^{[1
]}

Ohara, Koya ^{[1
]}

Cho, Yasuo ^{[1
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

NANOTECHNOLOGY | 2007年 / 18卷 / 08期

关键词：

D O I：

10.1088/0957-4484/18/8/084014

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Non- contact scanning nonlinear dielectric microscopy ( NC- SNDM) operated under ultra high vacuum ( UHV) conditions was developed. This microscopy enables the simultaneous measurement of the topography and dielectric properties of a specimen. For electrically conductive materials, the tunnelling current is also measurable. The atomic structure of Si( 111) 7 x 7 was successfully resolved using this new SNDM technique. This is the first report on the achievement of atomic resolution in capacitance measurements.

引用

页数：5

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