Visualization of electrons and holes localized in the thin gate film of metal-oxide-nitride-oxide-semiconductor type Flash memory by scanning nonlinear dielectric microscopy

被引：11

作者：

Honda, K

Hashimoto, S

Cho, Y

机构：

[1] Fujitsu Labs Ltd, Memory Device Lab, Atsugi, Kanagawa 2430197, Japan

[2] Tohoku Univ, Res Inst Elect Commun, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

NANOTECHNOLOGY | 2005年 / 16卷 / 03期

关键词：

D O I：

10.1088/0957-4484/16/3/017

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

By applying scanning nonlinear dielectric microscopy (SNDM), we identified the position of electrons/holes existing in the gate SiO2-Si3N4-SiO2 (ONO) film of the metal-oxide-nitride-oxide-semiconductor (MONOS) type Flash memory. The electrons were detected in the Si3N4 part of the ONO film. The holes, on the other hand, were found in the Si3N4 film as well as in the bottom SiO2 film.

引用

页码：S90 / S93

页数：4

共 8 条

[1] CHARGE STORAGE IN A NITRIDE-OXIDE-SILICON MEDIUM BY SCANNING CAPACITANCE MICROSCOPY [J].