Comparison of hafnium oxide films grown by atomic layer deposition from iodide and chloride precursors

被引：130

作者：

Kukli, K

Ritala, M

Sajavaara, T

Keinonen, J

Leskelä, M

机构：

[1] Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland

[2] Univ Helsinki, Accelerator Lab, FIN-00014 Helsinki, Finland

来源：

THIN SOLID FILMS | 2002年 / 416卷 / 1-2期

基金：

芬兰科学院;

关键词：

crystallization; dielectrics; metal-oxide-semiconductor structure; oxides;

D O I：

10.1016/S0040-6090(02)00612-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Stoichiometric HfO2 films were atomic layer deposited from MfI(4) and HfCl4 at 300 degreesC on p-Si( 1 0 0) substrates. Water was in both cases used as an oxygen precursor. The films consisted dominantly of monoclinic HfO2 phase. Additional tetragonal HfO2 could be detected only in the films grown from HfCl4. Effective permittivities were frequency-independent and varied in the range of 12-14, without clear dependence on the precursor used. Oxide rechargeable trap densities were relatively high for the films grown from HfCl4. The films grown from HfI4 were more resistant against breakdown. The films grown from either precursor contained 0.4 at.% of halide residues and 1.0-1.5 at.% hydrogen. Annealing in forming gas at 400 degreesC did not affect the film composition. The growth rate was somewhat more stable in the HfI4, based process. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：72 / 79

页数：8

共 43 条

[21] Highly reliable thin hafnium oxide gate dielectric [J].