Current status and advances in the growth of SiC

被引：51

作者：

Yakimova, R ^{[1
]}

Janzén, E ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

来源：

关键词：

crystal growth; micropipes; silicon carbide (SiC); sublimation; CVD growth;

D O I：

10.1016/S0925-9635(99)00219-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recent achievements in crystal growth and homoepitaxy of SiC, mainly of the 4H polytype, have been discussed. Several growth techniques, such as seeded sublimation growth, high temperature chemical vapor deposition, sublimation epitaxy and liquid phase epitaxy have been utilized to develop technological procedures and understand the growth processes better. The advantages of either method have been stressed. The main target has been the reproducible growth of micropipe free substrate material and thick epitaxial layers for device applications. The purity of the layers has been of special interest. The results obtained are indicative for the massive progress that has been achieved in SiC crystal growth during recent years. (C) 2000 Elsevier Science S.A. Al rights reserved.

引用

页码：432 / 438

页数：7

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