GaAs metal-oxide-semiconductor field effect transistors fabricated with low-temperature liquid-phase-deposited SiO2

Liquid-phase deposition of SiO2 (LPD-SiO2) is used for the deposition of silicon dioxide (similar to40 Angstrom) on GaAs substrate during GaAs metal-oxide-semiconductor field effect transistors (MOSFET) fabrication with an 8 mum gate length and 40 mum channel width, thereby providing the advantage of a process temperature lower than 60degreesC. LPD-SiO2 quality can be improved significantly by annealing at 400degreesC in N-2 for 33 min, This occurs automatically, however, during source (drain) ohmic contact deposition/alloying, which also requires annealing at 400degreesC in N-2 for 33 min. A normalized transconductance was obtained in the vicinity of 280 ms/mm, High-quality MOSFET fabrication using LPD-SiO2 is proven feasible, and involves fewer fabrication steps than other MOSFET fabrication technologies.