Elastic strain relaxation in discontinuous wetting layers and its impact on lateral ordering of heteroepitaxial dots

被引：1

作者：

Hanke, M.

Boeck, T.

Gerlitzke, A. -K.

Syrowatka, F.

Heyroth, F.

机构：

[1] Univ Halle Wittenberg, Fachbereich Phys, D-06120 Halle, Germany

[2] Inst Kristallzuchtung, D-12489 Berlin, Germany

[3] Interdisziplinares Zentrum Mat Wissensch, D-06120 Halle, Germany

来源：

PHYSICAL REVIEW B | 2006年 / 74卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.74.153304

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We discuss morphological changes of strained SiGe/Si(001) dots grown from an indium solution. In the course of a particular depletion scenario initial, lenslike dots transform into truncated pyramids of fourfold symmetry inside circular rims of rising height and steep inner edge. Further dot nucleation performs close to the rim indicating elastically relaxed lattice sites. The observations made are supported by numerical finite element calculations on the strain energy distribution.

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页数：4

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