Free excitons with n=2 in bulk GaN

被引:41
作者
Steube, M [1 ]
Reimann, K [1 ]
Frohlich, D [1 ]
Clarke, SJ [1 ]
机构
[1] CORNELL UNIV,DEPT CHEM,ITHACA,NY 14853
关键词
D O I
10.1063/1.119697
中图分类号
O59 [应用物理学];
学科分类号
摘要
The direct observation of free A, B, and C excitons with n = 2 in hexagonal bulk gallium nitride (GaN) by two-photon spectroscopy is reported. From these data, the band gaps, exciton binding energies, and hole masses for the three uppermost valence bands are calculated. (C) 1997 American Institute of Physics.
引用
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页码:948 / 949
页数:2
相关论文
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