Fabrication and photoluminescent characteristics of ZnO/Mg0.2Zn0.8O coaxial nanorod single quantum well structures

被引：37

作者：

Bae, Jun Young

Yoo, Jinkyoung

Yi, Gyu-Chul ^{[1
]}

机构：

[1] POSTECH, Natl CRI Ctr Semicond Nanorods, Pohang 790784, Gyeongbuk, South Korea

[2] POSTECH, Dept Mat Sci & Engn, Pohang 790784, Gyeongbuk, South Korea

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 17期

关键词：

D O I：

10.1063/1.2364463

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report on fabrication and photoluminescent (PL) properties of ZnO/Mg0.2Zn0.8O coaxial nanorod quantum structures with various quantum well and barrier layer thicknesses. Employing catalyst-free metal-organic vapor-phase epitaxy, coaxial nanorod single quantum well structures were fabricated by the alternate heteroepitaxial growth of ZnO and Mg0.2Zn0.8O layers over the entire surfaces of the ZnO nanorods with fine thickness controls of the layers. The quantum confinement effect of carriers in coaxial nanorod quantum structures depends on the Mg0.2Zn0.8O quantum barrier layer thickness as well as the thickness of the ZnO quantum well layer. The temperature-dependent PL characteristics of the coaxial nanorod quantum structures are also discussed. (c) 2006 American Institute of Physics.

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