Diamond growth mechanisms in various environments

被引:47
作者
Gicquel, A [1 ]
Silva, F [1 ]
Hassouni, K [1 ]
机构
[1] Univ Paris 13, CNRS UPR 1311, Lab Ingn Mat & Hautes Press, F-93430 Villetaneuse, France
关键词
D O I
10.1149/1.1393510
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The goal of this study was to improve our understanding of diamond growth reactors. Direct relationships were set up between key parameters at a microscale level and diamond film characteristics. The coupled action of plasma variables, such as microwave power density, substrate temperature, and percentage of methane, on the density of the key species that control diamond growth was studied by spectroscopic diagnostics and modeling. The influence of local conditions on the domain of validity of the Van der Drift model, which describes texture development from a random distribution of diamond nuclei, is discussed. The results suggested that different chemical kinetic models, which depend on plasma conditions, must be used to describe "diamond" growth by chemical vapor deposition. (C) 2000 The Electrochemical Society. S0013-4651(99)08-102-1. FLU rights reserved.
引用
收藏
页码:2218 / 2226
页数:9
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