Exciton dephasing and absorption line shape in semiconductor quantum dots

被引:21
作者
Goupalov, SV [1 ]
Suris, RA
Lavallard, P
Citrin, DS
机构
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[3] Univ Paris 07, CNRS, UMR 7588, Phys Solides Grp, F-75251 Paris 05, France
[4] Univ Paris 06, F-75251 Paris 05, France
[5] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
基金
美国国家科学基金会; 俄罗斯基础研究基金会;
关键词
exciton-phonon interaction; homogeneous broadening; linear absorption; quantum dots;
D O I
10.1109/JSTQE.2002.804237
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The homogeneous broadening of exciton absorption spectral lines in semiconductor quantum dots (QDs) in the strong confinement regime is studied theoretically. It is shown that the term linear in nuclear displacements in the difference of the phonon Hamiltonians of the ground and optically excited states does not lead to the zero-phonon line (ZPL) broadening. The ZPL width is contributed by the term quadratic in nuclear displacements associated with short-living optical phonons. This contribution is estimated for CdSe nanocrystals (NCs) and found to be much less than the linewidth observed in recent experiments., We conclude that the experimentally observed linewidth is due to the longitudinal lifetime associated with the exciton relaxation to the dark state. The shape of spectral winks originating from the exciton interaction with long-living acoustic phonons is studied at various temperatures for a CdSe NC embedded in a glass matrix.
引用
收藏
页码:1009 / 1014
页数:6
相关论文
共 17 条
[1]  
BARRON THK, 1974, DYNAMICAL PROPERTIES
[2]   Acoustic phonon broadening mechanism in single quantum dot emission [J].
Besombes, L ;
Kheng, K ;
Marsal, L ;
Mariette, H .
PHYSICAL REVIEW B, 2001, 63 (15)
[3]   Ultralong dephasing time in InGaAs quantum dots [J].
Borri, P ;
Langbein, W ;
Schneider, S ;
Woggon, U ;
Sellin, RL ;
Ouyang, D ;
Bimberg, D .
PHYSICAL REVIEW LETTERS, 2001, 87 (15) :157401-157401
[4]   Homogeneous broadening of the zero-optical-phonon spectral line in semiconductor quantum dots [J].
Goupalov, SV ;
Suris, RA ;
Lavallard, P ;
Citrin, DS .
NANOTECHNOLOGY, 2001, 12 (04) :518-522
[5]   The fine structure of excitonic levels in CdSe nanocrystals [J].
Gupalov, SV ;
Ivchenko, EL .
PHYSICS OF THE SOLID STATE, 2000, 42 (11) :2030-2038
[6]   Theory of Raman light scattering by nanocrystal acoustic vibrations [J].
Gupalov, SV ;
Merkulov, IA .
PHYSICS OF THE SOLID STATE, 1999, 41 (08) :1349-1358
[7]  
KRIVOGLAZ MA, 1964, FIZ TVERD TELA+, V6, P1340
[8]   GENERALIZED CUMULANT EXPANSION METHOD [J].
KUBO, R .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (07) :1100-&
[9]  
Mukamel S, 1995, PRINCIPLES NONLINEAR
[10]   High-resolution spectral hole burning in CdSe/ZnS core/shell nanocrystals [J].
Palinginis, P ;
Wang, HL .
APPLIED PHYSICS LETTERS, 2001, 78 (11) :1541-1543