Interaction of Ce overlayers with the GaSb(111) surface and oxidation of the Ce/GaSb interface

被引：2

作者：

Liang, Q ^{[1
]}

Ji, MR ^{[1
]}

Wu, JX ^{[1
]}

Ma, MS ^{[1
]}

Liu, XM ^{[1
]}

Zhang, YH ^{[1
]}

机构：

[1] UNIV SCI & TECHNOL CHINA,STRUCT RES LAB,HEFEI 230026,PEOPLES R CHINA

来源：

APPLIED SURFACE SCIENCE | 1997年 / 120卷 / 1-2期

关键词：

III-V semiconductor; cerium; GaSb; interface; lanthanides; oxidation; X-ray photoelectron spectroscopy;

D O I：

10.1016/S0169-4332(97)00240-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this paper we use XPS to study the interaction of Ce overlayers with the semiconductor GaSb(111) surface and Ce-promoted oxidation of the substrate. The results show that when cerium deposits on GaSb(111), it forms weak bonds of Ce-Ga and Ce-Sb with the substrate and makes Ga atoms diffuse out. A Ce-Ga intermetallic phase is formed on the surface. When the exposure of O-2 reaches 50 L, the oxide of cerium, Ce2O3, begins to change into unstable CeO2. The dissociation of CeO2 results in obvious oxidation of the substrate. The main products are Ga2O3, Sb2O3 and then Sb2O5. After annealing at 250 and 400 degrees C, respectively, some of the oxygen atoms transfer from cerium dioxide toward Ga and Sb in the substrate, by which it strongly promotes the oxidation of the substrate. (C) 1997 Elsevier Science B.V.

引用

页码：165 / 170

页数：6

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