InAs/InP 1550 nm quantum dash semiconductor optical amplifiers

被引：31

作者：

Bilenca, A ^{[1
]}

Alizon, R

Mikhelashvili, V

Eisenstein, G

Schwertberger, R

Gold, D

Reithmaier, JP

Forchel, A

机构：

[1] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel

[2] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

ELECTRONICS LETTERS | 2002年 / 38卷 / 22期

关键词：

D O I：

10.1049/el:20020928

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Quantum confined laser and optical amplifier structures based on quantum dots and dashes (QD) have been at the forefront of optoelectronics device research for several years. Owing to their superb optoelectronic properties such as wide gain bandwidth, low threshold current density, low alpha parameter and fast switching response, QD-based devices are expected to play a major role in future fibre optics systems and networks.

引用

页码：1350 / 1351

页数：2

共 10 条

[1] Symmetric highly efficient (∼0 dB) wavelength conversion based on four-wave mixing in quantum dot optical amplifiers [J].

Akiyama, T ;

Kuwatsuka, H ;

Hatori, N ;

Nakata, Y ;

Ebe, H ;

Sugawara, M .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (08) :1139-1141

[2] GAIN AND THE THRESHOLD OF 3-DIMENSIONAL QUANTUM-BOX LASERS [J].

ASADA, M ;

MIYAMOTO, Y ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1915-1921

[3] High-speed modulation and switching characteristics of In(Ga)As-Al(Ga)As self-organized quantum-dot lasers [J].

Bhattacharya, P ;

Klotzkin, D ;

Qasaimeh, O ;

Zhou, WD ;

Krishna, S ;

Zhu, DH .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2000, 6 (03) :426-438

[4] OBSERVATION OF HIGHLY NONDEGENERATE 4-WAVE-MIXING IN 1.5 MU-M TRAVELING-WAVE SEMICONDUCTOR OPTICAL AMPLIFIERS AND ESTIMATION OF NONLINEAR GAIN COEFFICIENT [J].

KIKUCHI, K ;

KAKUI, M ;

ZAH, CE ;

LEE, TP .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (01) :151-156

[5] High-temperature operating 1.3-μm quantum-dot lasers for telecommunication applications [J].

Klopf, F ;

Krebs, R ;

Reithmaier, JP ;

Forchel, A .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2001, 13 (08) :764-766

[6] InAs/GaInAs quantum dot DFB lasers emitting at 1.3μm [J].

Klopf, F ;

Krebs, R ;

Wolf, A ;

Emmerling, M ;

Reithmaier, JP ;

Forchel, A .

ELECTRONICS LETTERS, 2001, 37 (10) :634-636

[7] Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation [J].

Maximov, MV ;

Asryan, LV ;

Shernyakov, YM ;

Tsatsul'nikov, AF ;

Kaiander, IN ;

Nikolaev, VV ;

Kovsh, AR ;

Mikhrin, SS ;

Ustinov, VM ;

Zhukov, AE ;

Alferov, ZI ;

Ledenstov, NN ;

Bimberg, D .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2001, 37 (05) :676-683

[8] Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP(311)B substrates [J].

Saito, H ;

Nishi, K ;

Sugou, S .

APPLIED PHYSICS LETTERS, 2001, 78 (03) :267-269

[9] Long-wavelength InP-based quantum-dash lasers [J].

Schwertberger, R ;

Gold, D ;

Reithmaier, JP ;

Forchel, A .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (06) :735-737

[10] Orientation dependence of the optical properties in InAs quantum-dash lasers on InP [J].

Ukhanov, AA ;

Wang, RH ;

Rotter, TJ ;

Stintz, A ;

Lester, LF ;

Eliseev, PG ;

Malloy, KJ .

APPLIED PHYSICS LETTERS, 2002, 81 (06) :981-983

← 1 →