Long-wavelength InP-based quantum-dash lasers

被引：169

作者：

Schwertberger, R ^{[1
]}

Gold, D ^{[1
]}

Reithmaier, JP ^{[1
]}

Forchel, A ^{[1
]}

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2002年 / 14卷 / 06期

关键词：

1.5-1.8-mu m emission wavelength; gas source molecular beam epitaxy; InP based quantum-dot lasers; optical telecommunication; self-organized growth; semiconductor lasers; temperature properties;

D O I：

10.1109/LPT.2002.1003076

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Self-assembled InAs quantum-dash (QD) lasers with emission wavelengths between 1.54 and 1.78 mum based on the AlGaInAs-AIInAs-InP material system were grown by gas source molecular beam epitaxy. Threshold current densities below 1 kA/cm(2) were achieved for 1-mm-long mirror coated broad area lasers with a stack of four QD layers. The devices can be operated up to 80 degreesC in pulsed mode and show a high T-0 value of 84 K up to 35 degreesC. In comparison to quantum-well lasers a much lower temperature sensitivity of the emission wavelength was achieved. The temperature shift of Deltalambda/DeltaT = 0.12 nm/K is as low as that caused by the refractive index change.

引用

页码：735 / 737

页数：3

共 13 条

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