Low chirp observed in directly modulated quantum dot lasers

被引:163
作者
Saito, H [1 ]
Nishi, K [1 ]
Kamei, A [1 ]
Sugou, S [1 ]
机构
[1] NEC Corp Ltd, Optoelect & High Frequency Device Labs, Tsukuba, Ibaraki, Japan
关键词
chirp; modulation; quantum dot lasers;
D O I
10.1109/68.883809
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have examined the dynamic properties of high-aspect-ratio InAs-quantum-dot (QD) lasers at room temperature. A novel characteristic of low chirp in the lasing wavelength under 1-GHz current modulation was found in the quantum dot lasers. This is more than one order of magnitude less than the typical chirp (0.2-nm) found in a conventional quantum well laser that we used as a reference. Low chirp was obtained not only in the ground state lasing but in the second level lasing of quantum dots as well.
引用
收藏
页码:1298 / 1300
页数:3
相关论文
共 11 条
[1]   Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers [J].
Harris, L ;
Mowbray, DJ ;
Skolnick, MS ;
Hopkinson, M ;
Hill, G .
APPLIED PHYSICS LETTERS, 1998, 73 (07) :969-971
[2]   SPECTRAL DEPENDENCE OF THE CHANGE IN REFRACTIVE-INDEX DUE TO CARRIER INJECTION IN GAAS-LASERS [J].
HENRY, CH ;
LOGAN, RA ;
BERTNESS, KA .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4457-4461
[3]   Nonequilibrium distribution in quantum dots lasers and influence on laser spectral output [J].
Jiang, H ;
Singh, J .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (10) :7438-7442
[4]   Small-signal modulation and differential gain of single-mode self-organized In0.4Ga0.6As/GaAs quantum dot lasers [J].
Kamath, K ;
Phillips, J ;
Jiang, H ;
Singh, J ;
Bhattacharya, P .
APPLIED PHYSICS LETTERS, 1997, 70 (22) :2952-2953
[5]   QUANTUM CAPTURE LIMITED MODULATION BANDWIDTH OF QUANTUM-WELL, WIRE, AND DOT LASERS [J].
KAN, SC ;
VASSILOVSKI, D ;
WU, TC ;
LAU, KY .
APPLIED PHYSICS LETTERS, 1993, 62 (19) :2307-2309
[6]   WAVELENGTH VARIATION OF 1.6 MU-M WAVELENGTH BURIED HETEROSTRUCTURE GAINASP INP LASERS DUE TO DIRECT MODULATION [J].
KISHINO, K ;
AOKI, S ;
SUEMATSU, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (03) :343-351
[7]  
Mao EH, 1997, ELECTRON LETT, V33, P1641, DOI 10.1049/el:19971105
[8]   Room-temperature photoluminescence spectroscopy of self-assembled In0.5Ga0.5As single quantum dots by using highly sensitive near-field scanning optical microscope [J].
Matsuda, K ;
Saiki, T ;
Saito, H ;
Nishi, K .
APPLIED PHYSICS LETTERS, 2000, 76 (01) :73-75
[9]   Gain and linewidth enhancement factor in InAs quantum-dot laser diodes [J].
Newell, TC ;
Bossert, DJ ;
Stintz, A ;
Fuchs, B ;
Malloy, KJ ;
Lester, LF .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (12) :1527-1529
[10]   Low-threshold lasing from high-density InAs quantum dots of uniform size [J].
Saito, H ;
Nishi, K ;
Sugimoto, Y ;
Sugou, S .
ELECTRONICS LETTERS, 1999, 35 (18) :1561-1563