Orientation dependence of the optical properties in InAs quantum-dash lasers on InP

被引：65

作者：

Ukhanov, AA ^{[1
]}

Wang, RH ^{[1
]}

Rotter, TJ ^{[1
]}

Stintz, A ^{[1
]}

Lester, LF ^{[1
]}

Eliseev, PG ^{[1
]}

Malloy, KJ ^{[1
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 06期

关键词：

D O I：

10.1063/1.1498875

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The anisotropy of the modal gain and the linewidth enhancement factor was experimentally measured in InAs/AlGaInAs/InP semiconductor lasers with an active region composed of quantum confined structures in the form of short wires called quantum dashes. This anisotropy is due to the polarization dependence of the transition matrix element in these quantum nanostructures. The spectral dependence of the gain and linewidth enhancement factor was investigated in a wavelength range from 1540 to 1640 nm at subthreshold current densities. The largest gain and the smallest linewidth enhancement factor were obtained when the quantum dashes were oriented perpendicular to the axis of the laser cavity. (C) 2002 American Institute of Physics.

引用

页码：981 / 983

页数：3

共 15 条

[1] GAIN AND THE THRESHOLD OF 3-DIMENSIONAL QUANTUM-BOX LASERS [J].

ASADA, M ;

MIYAMOTO, Y ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1915-1921

[2]

Coldren L. A., 2012, DIODE LASERS PHOTONI, V218

[3] CW DEGRADATION AT 300 DEGREES K OF GAAS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS .2. ELECTRONIC GAIN [J].

HAKKI, BW ;

PAOLI, TL .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) :4113-4119

[4] Measurement of semiconductor laser gain and dispersion curves utilizing Fourier transforms of the emission spectra [J].

Hofstetter, D ;

Faist, J .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (11) :1372-1374

[5] Measurement of optical cavity properties in semiconductor lasers by Fourier analysis of the emission spectrum [J].

Hofstetter, D ;

Thornton, RL .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (10) :1914-1923

[6] Efficient high-temperature CW lasing operation of oxide-confined long-wavelength InAs quantum dot lasers [J].

Huang, XD ;

Stintz, A ;

Hains, CP ;

Liu, GT ;

Cheng, J ;

Malloy, KJ .

ELECTRONICS LETTERS, 2000, 36 (01) :41-42

[7] Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well [J].

Liu, GT ;

Stintz, A ;

Li, H ;

Malloy, KJ ;

Lester, LF .

ELECTRONICS LETTERS, 1999, 35 (14) :1163-1165

[8] SPECTRAL CHARACTERISTICS OF LINEWIDTH ENHANCEMENT FACTOR-ALPHA OF MULTIDIMENSIONAL QUANTUM WELLS [J].

MIYAKE, Y ;

ASADA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (07) :1280-1281

[9] 1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA [J].

Mukai, K ;

Nakata, Y ;

Otsubo, K ;

Sugawara, M ;

Yokoyama, N ;

Ishikawa, H .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (10) :1205-1207

[10] Gain and linewidth enhancement factor in InAs quantum-dot laser diodes [J].

Newell, TC ;

Bossert, DJ ;

Stintz, A ;

Fuchs, B ;

Malloy, KJ ;

Lester, LF .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (12) :1527-1529

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