Ultrathin Bi films on Si(100)

被引：18

作者：

Bobisch, C. ^{[1
]}

Bannani, A. ^{[1
]}

Matena, M. ^{[1
]}

Moeller, R. ^{[1
]}

机构：

[1] Univ Duisburg Gesamthsch, Fachbereich Phys, D-47048 Duisburg, Germany

来源：

NANOTECHNOLOGY | 2007年 / 18卷 / 05期

关键词：

D O I：

10.1088/0957-4484/18/5/055606

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work we report on the growth of high quality bismuth films with a layer thickness of 3-4 nm on a ( 100)-oriented silicon surface. We present a combined STM and LEED study to determine the best possible growth conditions regarding, for example, film flatness, grain size and low surface roughness. The deposition of bismuth was performed at a low temperature of about 130 K followed by moderate annealing to an ambient temperature or to temperatures slightly above. The result is an epitaxial Bi film with low surface roughness.

引用

页数：4

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