Scanning tunneling microscopy observation of bismuth growth on Si(100) surfaces

被引：51

作者：

Naitoh, M

Shimaya, H

Nishigaki, S

Oishi, N

Shoji, F

机构：

[1] KUMAMOTO NATL COLL TECHNOL,KUMAMOTO 86111,JAPAN

[2] KYUSHU KYORITSU UNIV,FAC ENGN,KITAKYUSHU,FUKUOKA 807,JAPAN

来源：

SURFACE SCIENCE | 1997年 / 377卷 / 1-3期

关键词：

bismuth; growth; low energy electron diffraction (LEED); scanning tunneling microscopy; silicon;

D O I：

10.1016/S0039-6028(96)01518-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report the results of a scanning tunneling microscopy investigation of the initial process of bismuth thin-film growth on Si(100) surfaces. Bismuth atoms adsorbed on the Si(100) surface at 400 degrees C form a film of diamond-like structure with a thickness of more than 2 layers, under the influence of the substrate structure. The top layer of the bismuth film shows (2 x n) (n similar or equal to 6) periodicity. In a bismuth desorption process, a new surface phase appears, which has linear chains of bismuth dimers perpendicular to substrate-Si step edges.

引用

页码：899 / 903

页数：5

共 12 条

[1] SURFACTANTS IN EPITAXIAL-GROWTH [J].