An STM observation of silver growth on hydrogen-terminated Si(111) surfaces

被引：23

作者：

Naitoh, M

Watanabe, A

Nishigaki, S

机构：

[1] Department of Electrical Engineering, Faculty of Engineering, Kyushu Institute of Technology, Tobata, Kitakyushu, Fukuoka 804

来源：

SURFACE SCIENCE | 1996年 / 357卷 / 1-3期

关键词：

hydrogen; low index single crystal surfaces; scanning tunneling microscopy; scanning tunneling spectroscopies; silicon; silver; surface relaxation and reconstruction; surface structure; morphology; roughness; and topography;

D O I：

10.1016/0039-6028(96)00076-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report results of a scanning tunneling microscopy and spectroscopy investigation of the initial process of AE thin-film growth on hydrogen-terminated Si(111) surfaces. It has been shown that Ag clusters are formed on the hydrogen-terminated restlayer when Ag is deposited at 300 degrees C, Large silicon-hydride clusters, which have been produced by hydrogen adsorption on clean surfaces, are desorbed by the Ag deposition and only small ones remain on the restlayer among Ag clusters.

引用

页码：140 / 144

页数：5

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