Epitaxial growth of fully a-/b-axis oriented SrBi2Ta2O9 films

被引：3

作者：

Garg, A ^{[1
]}

Lloyd, SJ ^{[1
]}

Barber, ZH ^{[1
]}

机构：

[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

来源：

INTEGRATED FERROELECTRICS | 2002年 / 44卷

关键词：

laser ablation; ferroelectric; SBT; thin films;

D O I：

10.1080/10584580190043796

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SrBi2Ta2O9 films were deposited on single crystal LaSrAlO4 (110) substrates by pulsed laser deposition at various growth temperatures and were characterized using x-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy (TEM). XRD measurement and TEM observations revealed that the films were highly epitaxial and were fully a-/b-axis oriented with excellent in-plane alignment with the substrate. AFM showed that films possessed a very smooth surface with RMS roughness of the order of 2-3 nm.

引用

页码：1 / 8

页数：8

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