Morphology of twinned GaN grown on (11 center dot 0) sapphire substrates

被引：9

作者：

Kato, T ^{[1
]}

Kung, P ^{[1
]}

Saxler, A ^{[1
]}

Sun, CJ ^{[1
]}

Ohsato, H ^{[1
]}

Razeghi, M ^{[1
]}

Okuda, T ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,EVANSTON,IL 60208

来源：

SOLID-STATE ELECTRONICS | 1997年 / 41卷 / 02期

关键词：

D O I：

10.1016/S0038-1101(96)00205-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN epitaxial thin films have been grown on (11.0) sapphire substrates in a low-pressure MOCVD system which permits the rotation of the samples. Epicrystals with two different morphologies have been grown simultaneously without rotation of samples in the reactor. One epicrystal is a bow-tie shape which is (10.0) oriented, and the other is a hexagonal pyramid shape which is (00.1) oriented. The simultaneous growth occurred under a slightly different temperature condition. The bow-tie epicrystals are constructed with a combination of two trapezoids with (00.1) and (00.1) basal planes and pyramidal planes. They are twinned with (<00.(1)over bar>) twin plane. A structure model of the twinned bow-tie crystal is also proposed. (C) 1997 Elsevier Science Ltd.

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页码：227 / 229

页数：3

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