Cathodoluminescence from Er2O3-doped n-type GaSb:Te crystals

被引：6

作者：

Hidalgo, P ^{[1
]}

Plaza, JL

Méndez, B

Diéguez, E

Piqueras, J

机构：

[1] Univ Complutense Madrid, Fac Ciencias Fis, Dept Fis Mat, E-28040 Madrid, Spain

[2] Univ Autonoma Madrid, Fac Ciencias, Dept Fis Mat, E-28049 Madrid, Spain

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2002年 / 14卷 / 48期

关键词：

D O I：

10.1088/0953-8984/14/48/370

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The luminescence of Te-doped GaSb crystals codoped with Er2O3 has been studied by means of cathodoluminescene (CL) using a scanning electron microscope. Doping with erbium oxide causes a substantial increase of the luminescence intensity of the crystals and spectral broadening. Deconvolution of the CL spectra reveals the existence of four components. The presence of erbium oxide induces a decrease of the 746 meV emission characteristic of Te-doped samples. CL images show a complex distribution of recombination centres which depends to a large extent on he local Te concentration.

引用

页码：13211 / 13215

页数：5

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