Effect of erbium doping on the defect structure of GaSb crystals

被引：13

作者：

Hidalgo, P ^{[1
]}

Méndez, B

Piqueras, J

Plaza, J

Diéguez, E

机构：

[1] Univ Complutense Madrid, Fac Fis, Dept Fis Mat, E-28040 Madrid, Spain

[2] Univ Autonoma Madrid, Dept Fis Mat, E-28049 Madrid, Spain

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1998年 / 13卷 / 12期

关键词：

D O I：

10.1088/0268-1242/13/12/017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaSb single crystals with different Er concentrations have been studied by cathodoluminescence in the scanning electron microscope. Low Er doping has been found to reduce the concentration of native accepters. In crystals with higher Er concentrations, Er-Sb precipitates form and doping becomes less efficient in suppressing the accepters. In these samples intraionic Er luminescence is observed.

引用

页码：1431 / 1433

页数：3

共 10 条

[1] Luminescence properties of transition-metal-doped GaSb [J].

Hidalgo, P ;

Mendez, B ;

Dutta, PS ;

Piqueras, J ;

Dieguez, E .

PHYSICAL REVIEW B, 1998, 57 (11) :6479-6484

[2] IMPACT EXCITATION OF THE ERBIUM-RELATED 1.54 MU-M LUMINESCENCE PEAK IN ERBIUM-DOPED INP [J].

ISSHIKI, H ;

KOBAYASHI, H ;

YUGO, S ;

KIMURA, T ;

IKOMA, T .

APPLIED PHYSICS LETTERS, 1991, 58 (05) :484-486

[3] Trap-mediated excitation of Er3+ photoluminescence in Er-implanted GaN [J].

Kim, S ;

Rhee, SJ ;

Turnbull, DA ;

Li, X ;

Coleman, JJ ;

Bishop, SG ;

Klein, PB .

APPLIED PHYSICS LETTERS, 1997, 71 (18) :2662-2664

[4] Cathodoluminescence microscopy of doped GaSb crystals [J].

Mendez, B ;

Piqueras, J ;

Dutta, PS ;

Dieguez, E .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 42 (1-3) :38-42

[5] CATHODOLUMINESCENCE STUDIES OF GROWTH AND PROCESS-INDUCED DEFECTS IN BULK GALLIUM ANTIMONIDE [J].

MENDEZ, B ;

DUTTA, PS ;

PIQUERAS, J ;

DIEGUEZ, E .

APPLIED PHYSICS LETTERS, 1995, 67 (18) :2648-2650

[6]

MENDEZ B, 1991, J APPL PHYS, V69, P2276

[7] PHOTOLUMINESCENT PROPERTIES OF ER-DOPED IN1-XGAXP PREPARED BY METALORGANIC VAPOR-PHASE EPITAXY [J].

NEUHALFEN, AJ ;

WESSELS, BW .

APPLIED PHYSICS LETTERS, 1991, 59 (18) :2317-2319

[8] X-RAY PHOTOELECTRON-SPECTROSCOPY AND OPTOELECTRICAL PROPERTIES OF LOW-CONCENTRATION ERBIUM-DOPED GASB LAYERS GROWN FROM SB-RICH SOLUTIONS BY LIQUID-PHASE EPITAXY [J].

SUN, YM ;

WU, MC .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (11) :6691-6695

[9] Photoluminescence spectroscopy of erbium implanted gallium nitride [J].

Thaik, M ;

Hommerich, U ;

Schwartz, RN ;

Wilson, RG ;

Zavada, JM .

APPLIED PHYSICS LETTERS, 1997, 71 (18) :2641-2643

[10] INTRACENTER TRANSITIONS IN TRIPLY IONIZED ERBIUM IONS DIFFUSED INTO III-V COMPOUND SEMICONDUCTORS [J].

ZHAO, XW ;

HIRAKAWA, K ;

IKOMA, T .

APPLIED PHYSICS LETTERS, 1989, 54 (08) :712-714

← 1 →