Chemically cleaned InP(100) surfaces in aqueous HF solutions

被引:52
作者
Kikuchi, D [1 ]
Adachi, S [1 ]
机构
[1] Gunma Univ, Fac Engn, Dept Elect Engn, Kiryu, Gumma 3768515, Japan
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 76卷 / 02期
关键词
InP; chemical treatment; spectroscopic ellipsometry; surface roughness; wettability; atomic force microscopy;
D O I
10.1016/S0921-5107(00)00430-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Chemically cleaned InP(100) surfaces in aqueous HF solutions at 20 degrees C have been studied using X-ray photoelectron spectroscopy (XPS) spectroscopic ellipsometry (SE), atomic force microscopy (AFM) and contact-angle measurements. The XPS data clearly indicated that the solutions caused the removal of the native oxide and left behind InP surface terminated by atomic fluorine. The SE data also indicated the immediate removal of the native oxide upon immersing the sample in the solutions. The AFM rms roughnesses for the HF-cleaned surfaces were similar to 0.1-0.2 nm which were considerably smaller than those obtained from the SE data (similar to 0.6 nm), the difference may be due to the SE technique being sensitive to both the surface microroughness and adsorbed chemical species (and/or a newly grown oxide film), while AFM was sensitive only to the surface microroughness. The as-degreased InP surface was, if anything, hydrophilic, while the HF-cleaned surfaces were hydrophobic. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:133 / 138
页数:6
相关论文
共 38 条
[1]   Chemical treatment effect of Si(111) surfaces in F-based aqueous solutions [J].
Adachi, S ;
Arai, T ;
Kobayashi, K .
JOURNAL OF APPLIED PHYSICS, 1996, 80 (09) :5422-5426
[2]  
ADACHI S, 1991, EMIS DATA REV SERIES, V6, P337
[3]   PREPARATION OF HIGH-QUALITY SURFACES ON SEMICONDUCTORS BY SELECTIVE CHEMICAL ETCHING [J].
ASPNES, DE ;
STUDNA, AA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :488-489
[4]   CHEMICAL ETCHING AND CLEANING PROCEDURES FOR SI, GE, AND SOME III-V COMPOUND SEMICONDUCTORS [J].
ASPNES, DE ;
STUDNA, AA .
APPLIED PHYSICS LETTERS, 1981, 39 (04) :316-318
[5]   DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1983, 27 (02) :985-1009
[6]  
Azzam R., 1977, ELLIPSOMETRY POLARIZ
[7]   BOND-STRENGTH MEASUREMENTS RELATED TO SILICON SURFACE HYDROPHILICITY [J].
BACKLUND, Y ;
HERMANSSON, K ;
SMITH, L .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (08) :2299-2301
[8]   OPTICAL-PROPERTIES OF IN1-XGAXP1-YASY, INP, GAAS, AND GAP DETERMINED BY ELLIPSOMETRY [J].
BURKHARD, H ;
DINGES, HW ;
KUPHAL, E .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :655-662
[9]   INFRARED-SPECTROSCOPY OF SI(111) AND SI(100) SURFACES AFTER HF TREATMENT - HYDROGEN TERMINATION AND SURFACE-MORPHOLOGY [J].
CHABAL, YJ ;
HIGASHI, GS ;
RAGHAVACHARI, K ;
BURROWS, VA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :2104-2109
[10]   LOW-TEMPERATURE SURFACE CLEANING OF INP BY IRRADIATION OF ATOMIC-HYDROGEN [J].
CHUN, YJ ;
SUGAYA, T ;
OKADA, Y ;
KAWABE, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (2B) :L287-L289