Oxygen solubility in Si melts: influence of boron addition

被引：10

作者：

Abe, K ^{[1
]}

Matsumoto, T ^{[1
]}

Maeda, S ^{[1
]}

Nakanishi, H ^{[1
]}

Hoshikawa, K ^{[1
]}

Terashima, K ^{[1
]}

机构：

[1] SHINSHU UNIV,FAC EDUC,NAGANO 380,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 181卷 / 1-2期

关键词：

solubility; oxygen; molten silicon; boron impurity;

D O I：

10.1016/S0022-0248(97)00244-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The influence of boron addition on oxygen solubility in silicon melts has been investigated. It was found that the oxygen concentration increases from 2 x 10(18) to 4 x 10(18) atoms/cm(3) with increasing boron concentration in silicon melts from nondoped to 5 x 10(20) atoms/cm(3). Boron atoms gather oxygen atoms by weak attraction in boron-doped silicon melts. The temperature dependence of oxygen concentration in boron-doped silicon melts is small and without definition in the experimental range investigated.

引用

页码：41 / 47

页数：7

共 10 条

[1]

[Anonymous], 1963, JON J APPL PHYS

[2] GETTERING OF IRON IMPURITIES IN P/P(+) EPITAXIAL SILICON-WAFERS WITH HEAVILY BORON-DOPED SUBSTRATES [J].