CALCULATED SOLUBILITIES OF OXYGEN IN LIQUID AND SOLID SILICON

[1] ABE T, 1981, ELECTROCHEMICAL SOC, P54

[2] SOLUBILITY OF CARBON IN PULLED SILICON CRYSTALS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (06) : 1211 - &

[3] THE ROLE OF OXYGEN IN SILICON FOR VLSI [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) : 602 - 608

[4] DYNAMIC OXYGEN EQUILIBRIUM IN SILICON MELTS DURING CRYSTAL-GROWTH BY THE CZOCHRALSKI TECHNIQUE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (01) : 189 - 193

[5] CHARTIER CP, 1975, SOLID STATE TECHNOL, V18, P31

[6] CRAVEN RA, 1981, ELECTROCHEMICAL SOC, P254

[7] DEKOCK AJR, 1973, ELECTROCHEMICAL SOC, P83

[8] FOLL H, 1977, ELECTROCHEMICAL SOC, P565

[9] OXYGEN DIFFUSION IN SILICON AND THE INFLUENCE OF DIFFERENT DOPANTS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) : 2030 - 2037

[10] THE SOLUBILITY OF OXYGEN IN SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 9 (3-4) : 214 - 216

[1] ABE T, 1981, ELECTROCHEMICAL SOC, P54

[2] SOLUBILITY OF CARBON IN PULLED SILICON CRYSTALS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (06) : 1211 - &

[3] THE ROLE OF OXYGEN IN SILICON FOR VLSI [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) : 602 - 608

[4] DYNAMIC OXYGEN EQUILIBRIUM IN SILICON MELTS DURING CRYSTAL-GROWTH BY THE CZOCHRALSKI TECHNIQUE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (01) : 189 - 193

[5] CHARTIER CP, 1975, SOLID STATE TECHNOL, V18, P31

[6] CRAVEN RA, 1981, ELECTROCHEMICAL SOC, P254

[7] DEKOCK AJR, 1973, ELECTROCHEMICAL SOC, P83

[8] FOLL H, 1977, ELECTROCHEMICAL SOC, P565

[9] OXYGEN DIFFUSION IN SILICON AND THE INFLUENCE OF DIFFERENT DOPANTS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) : 2030 - 2037

[10] THE SOLUBILITY OF OXYGEN IN SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 9 (3-4) : 214 - 216