Mirror passivation of InGaAs lasers

被引：9

作者：

Dutta, NK

Hobson, WS

Zydzik, GJ

deJong, JF

Parayanthal, P

Passlack, M

Chakrabarti, UK

机构：

[1] Bell Laboratories, Lucent Technologies, Murray Hill

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 03期

关键词：

gallium indium arsenide; semiconductor junction lasers;

D O I：

10.1049/el:19970125

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report a mirror passivation technique for high power 980 nm lasers. The technique involves depositing a film of gallium oxide on the facet immediately after facet cleaving. Photoluminescence measurements show that the GaAs surface covered with in situ deposited gallium oxide has two orders of magnitude higher luminescence than that for bare GaAs surface. Lasers with good aging characteristics have been fabricated.

引用

页码：213 / 214

页数：2

共 6 条

[1] ZnSe for mirror passivation of high power GaAs based lasers [J].