Improved Electrical Performance and Uniformity of MILC Poly-Si TFTs Manufactured Using Drive-In Nickel-Induced Lateral Crystallization

被引：11

作者：

Chang, Chih-Pang ^{[1
]}

Wu, YewChung Sermon ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 11期

关键词：

Drive-in nickel-induced lateral crystallization (DILC); fluorine ion (F+) implantation; thin-film transistors (TFTs); uniformity; THIN-FILM TRANSISTORS; IMPLANTATION; FABRICATION;

D O I：

10.1109/LED.2009.2031130

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new manufacturing method for polycrystalline silicon (poly-Si) thin-film transistors (TFTs) using drive-in nickel-induced lateral crystallization (DILC) was proposed. In DILC, a F+ implantation was used to drive Ni in the alpha-Si layer. To reduce Ni contamination, the remained Ni film was then removed and subsequently annealed at 590 degrees C. It was found that DILC TFTs exhibit high field-effect mobility, low threshold voltage, low subthreshold slope, high ON-state current, lower trap-state density, smaller standard deviations, and low OFF-state leakage current compared with conventional Ni-metal-induced lateral crystallization TFTs.

引用

页码：1176 / 1178

页数：3

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