A fabrication method for reduction of silicide contamination in polycrystalline-silicon thin-film transistors

被引：11

作者：

Song, Nam-Kyu ^{[1
]}

Kim, Young-Su ^{[1
]}

Kim, Min-Sun ^{[1
]}

Han, Shin-Hee ^{[1
]}

Joo, Seung-Ki ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2007年 / 10卷 / 05期

关键词：

D O I：

10.1149/1.2710962

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A major cause of degradations in polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) fabricated by Ni metal-induced lateral crystallization (MILC) is known to be due to the presence of Ni silicides in the channel region. In this letter, we proposed a structure for the reduction of Ni silicides in the MILC region. Also, the electrical properties of poly-Si TFTs which were fabricated with the structure were investigated. It was found that the field-effect mobility and the leakage current of p-channel Ni seed MILC TFTs is significantly improved compared to TFTs fabricated by conventional MILC process. (c) 2007 The Electrochemical Society.

引用

页码：H142 / H144

页数：3

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