A top-gate carbon-nanotube field-effect transistor with a titanium-dioxide insulator

被引:34
作者
Nihey, F
Hongo, H
Yudasaka, M
Iijima, S
机构
[1] NEC Corp Ltd, Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan
[2] NEC Corp Ltd, Japan Sci & Technol Corp, Tsukuba, Ibaraki 3058501, Japan
[3] Meijo Univ, Fac Sci & Technol, Japan Sci & Technol Corp, Tenpaku Ku, Nagoya, Aichi 4688502, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2002年 / 41卷 / 10A期
关键词
single-wall carbon nanotube; field-effect transistor; top-gate structure; titanium dioxide; gate insulator;
D O I
10.1143/JJAP.41.L1049
中图分类号
O59 [应用物理学];
学科分类号
摘要
We developed a carbon-nanotube field-effect transistor (CNTFET), in which a gate electrode and a gate insulator are located on top of a semiconducting single-wall carbon nanotube channel on a Si/SiO2 substrate. The gate insulator is made of titanium dioxide and is 2-3 nm thick. The transconductance of this device at a drain voltage of 100 mV is 320 nS, which, due to the high dielectric constant and nanoscale thickness of the gate insulator, is higher than that of any back-gate and top-gate CNTFETs reported so far.
引用
收藏
页码:L1049 / L1051
页数:3
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