Structural, Electronics and Optical Properties of CaO

被引：24

作者：

Albuquerque, E. L. ^{[1
]}

Vasconcelos, M. S. ^{[2
]}

机构：

[1] Univ Fed Rio Grande do Norte, Dept Fis, BR-59072970 Natal, RN, Brazil

[2] Ctr Fed Educ Tecnol Ma, Dept Ciencis Exatas, Sao Luis, MA 65025, Brazil

来源：

PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY | 2008年 / 100卷

关键词：

D O I：

10.1088/1742-6596/100/4/042006

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The carrier effective masses of CaO in the cubic phase are estimated by ab initio calculations, which are used for the simulation of Si/CaO metal-oxide-semiconductor (MOS) devices by solving Schrodinger and Poisson equations self consistently. It is shown that higher switching speed, longer lifetimes, and higher endurance can be obtained replacing SiO2 by CaO as gate dielectric, suggesting promising biomedical applications for Si/CaO-based MOS devices due to the CaO bio-compatibility.

引用

页数：4

共 14 条

[1] Full potential calculation of structural, electronic and elastic properties of alkaline earth oxides MgO, CaO and SrO [J].

Baltache, H ;

Khenata, R ;

Sahnoun, M ;

Driz, M ;

Abbar, B ;

Bouhafs, B .

PHYSICA B-CONDENSED MATTER, 2004, 344 (1-4) :334-342

[2] GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD [J].

CEPERLEY, DM ;

ALDER, BJ .

PHYSICAL REVIEW LETTERS, 1980, 45 (07) :566-569

[3] Diamond-like carbon:: alteration of the biological acceptance due to Ca-O incorporation [J].

Dorner-Reisel, A ;

Schürer, C ;

Nischan, C ;

Seidel, O ;

Müller, E .

THIN SOLID FILMS, 2002, 420 :263-268

[4] Effects of reduced coordination number for Ca on the electron redistribution during Ca-O-Si bridge bonding from CaO or Ca(OH)2 and SiO2 [J].

Fujiwara, Y ;

Isobe, T ;

Senna, M ;

Tanaka, J .

JOURNAL OF PHYSICAL CHEMISTRY A, 1999, 103 (48) :9842-9846

[5] Band offsets and Schottky barrier heights of high dielectric constant oxides [J].

Peacock, PW ;

Robertson, J .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (08) :4712-4721

[6] SELF-INTERACTION CORRECTION TO DENSITY-FUNCTIONAL APPROXIMATIONS FOR MANY-ELECTRON SYSTEMS [J].

PERDEW, JP ;

ZUNGER, A .

PHYSICAL REVIEW B, 1981, 23 (10) :5048-5079

[7]

PICHET P, 1988, J GEOPHYS RES, V93, P15279

[8] Self-consistent modeling of accumulation layers and tunneling currents through very thin oxides [J].

Rana, F ;

Tiwari, S ;

Buchanan, DA .

APPLIED PHYSICS LETTERS, 1996, 69 (08) :1104-1106

[9] Analytic model for direct tunneling current in polycrystalline silicon-gate metal-oxide-semiconductor devices [J].

Rosenbaum, E ;

Yang, K .

APPLIED PHYSICS LETTERS, 1999, 74 (03) :457-459

[10] Gate inversion effect in Si1-xGex/HfO2/Si metal-oxide-semiconductor devices -: art. no. 243507 [J].

Silva, JCE ;

de Oliveira, EL ;

de Sousa, JS ;

Freire, JAK ;

Freire, VN ;

Farias, GA .

APPLIED PHYSICS LETTERS, 2005, 86 (24) :1-3

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