Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for "type inversion"

被引：54

作者：

Pintilie, I

Fretwurst, E

Lindström, G

Stahl, J

机构：

[1] Natl Inst Mat Phys, Bucharest, Romania

[2] Univ Hamburg, Inst Expt Phys, D-22761 Hamburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 13期

关键词：

D O I：

10.1063/1.1564869

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Radiation-induced defects in silicon diodes were investigated after exposure to high doses of Co-60-gamma irradiation using the thermally stimulated current method. We have found that, for high irradiation doses, a second-order defect can be detected. This defect is largely suppressed in oxygen-enriched material while it is the main cause for the space charge sign inversion effect observed in standard float-zone material. (C) 2003 American Institute of Physics.

引用

页码：2169 / 2171

页数：3

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