p-type InN and In-rich InGaN

被引：23

作者：

Ager, J. W., III ^{[1
]}

Jones, R. E.

Yamaguchi, D. M.

Yu, K. M.

Walukiewicz, W.

Li, S. X.

Haller, E. E.

Lu, H.

Schaff, W. J.

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[3] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY USA

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2007年 / 244卷 / 06期

关键词：

D O I：

10.1002/pssb.200674762

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Capacitance-voltage (CV) measurements using a liquid electrolyte as rectifying contact were used to provide definitive proof of p-type activity beneath a surface inversion layer in Mg-doped InN and In-rich InGaN. Analysis of CV data using the Poisson equation allows net charge as a function of depth to be determined. In undoped InN, good agreement of the net donor concentration below the surface accumulation layer with bulk Hall effect data is obtained. In Mg-doped InN and InGaN, the CV data are shown to be consistent with the presence of a net acceptor concentration N-A-N-D near 10(19) cm(-3) below a surface inversion layer. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1820 / 1824

页数：5

共 13 条

[1] BLOOD P, 1992, ELECT CHARACTERIZATI, P268
[2] Evidence for p-type doping of InN
Jones, RE
Yu, KM
Li, SX
Walukiewicz, W
Ager, JW
Haller, EE
Lu, H
Schaff, WJ
[J]. PHYSICAL REVIEW LETTERS, 2006, 96 (12)
[3] KOBLMULLER G, 2006, APPL PHYS LETT, V89
[4] Fermi-level stabilization energy in group III nitrides
Li, SX
Yu, KM
Wu, J
Jones, RE
Walukiewicz, W
Ager, JW
Shan, W
Haller, EE
Lu, H
Schaff, WJ
[J]. PHYSICAL REVIEW B, 2005, 71 (16)
[5] Improvement on epitaxial grown of InN by migration enhanced epitaxy
Lu, H
Schaff, WJ
Hwang, J
Wu, H
Yeo, W
Pharkya, A
Eastman, LF
[J]. APPLIED PHYSICS LETTERS, 2000, 77 (16) : 2548 - 2550
[6] Origin of electron accumulation at wurtzite InN surfaces -: art. no. 201307
Mahboob, I
Veal, TD
Piper, LFJ
McConville, CF
Lu, H
Schaff, WJ
Furthmüller, J
Bechstedt, F
[J]. PHYSICAL REVIEW B, 2004, 69 (20) : 201307 - 1
[7] Intrinsic electron accumulation at clean InN surfaces
Mahboob, I
Veal, TD
McConville, CF
Lu, H
Schaff, WJ
[J]. PHYSICAL REVIEW LETTERS, 2004, 92 (03) : 4
[8] Martin G, 1996, APPL PHYS LETT, V68, P2541, DOI 10.1063/1.116177
[9] Demonstration of nearly non-degenerate electron conduction in InN grown by molecular beam epitaxy
Swartz, CH
Tomkins, RP
Myers, TH
Lu, H
Schaff, WJ
[J]. PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7, 2005, 2 (07): : 2250 - 2253
[10] AMPHOTERIC NATIVE DEFECTS IN SEMICONDUCTORS
WALUKIEWICZ, W
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (21) : 2094 - 2096

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