Thermal impedance of VCSEL's with AlOx-GaAs DBR's

被引：29

作者：

MacDougal, MH ^{[1
]}

Geske, J ^{[1
]}

Lin, CK ^{[1
]}

Bond, AE ^{[1
]}

Dapkus, PD ^{[1
]}

机构：

[1] Univ So Calif, Natl Ctr Integrated Photon Technol, Dept Elect Engn Electrophys, Los Angeles, CA 90089 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 01期

关键词：

lasers; mirrors; semiconductor growth; semiconductor-insulator materials; semiconductor lasers;

D O I：

10.1109/68.651085

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have measured the thermal impedance of vertical-cavity surface-emitting lasers (VCSEL's) with oxide/GaAs DBR's and shown that it is comparable to that of VCSEL's with all-semiconductor DBR's. A VCSEL with an 8-mu m oxide aperture shows a thermal impedance of 2.8 degrees C/mW. By varying the aperture size, the thermal conductance of the material below the active area is 0.255 W/cm .degrees C. These results demonstrate that the oxide is not a major barrier to heat transport out of the active region.

引用

页码：15 / 17

页数：3

共 9 条

[1]

COLDREN LA, 1995, WILEY SERIES MICROWA

[2] NATIVE-OXIDE DEFINED RING CONTACT FOR LOW-THRESHOLD VERTICAL-CAVITY LASERS [J].