Correlation between deep defect states and device parameters in CuIn1-xGaxSe2 photovoltaic devices

被引：2

作者：

Heath, JT ^{[1
]}

Cohen, JD

Shafarman, WN

机构：

[1] Univ Oregon, Dept Phys, Eugene, OR 97403 USA

[2] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA

来源：

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年

关键词：

D O I：

10.1109/PVSC.2002.1190635

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Sub-bandgap defect densities and 'minority carder collection properties have been characterized for a series of, Culn(1-x)Ga(x)Se(2) devices with varying device efficiencies. Samples fabricated using reduced substrate temperatures Sa during growth have also been studied, and show additional defect response. Transient photocapacitance and photocurrent spectroscopies were employed to deduce the defect distributions and minority, carrier mobilities. Drive-level capacitance profiling was used to determine the spatial and thermal energy distributions of the majority carrier traps. Photovoltaic device parameters were determined for all samples. It appears that the device efficiency is not clearly controlled by any single sub-bandgap defect population.

引用

页码：596 / 599

页数：4

共 16 条

[1] DEEP DEFECT STRUCTURE AND CARRIER DYNAMICS IN AMORPHOUS-SILICON AND SILICON-GERMANIUM ALLOYS DETERMINED BY TRANSIENT PHOTOCAPACITANCE METHODS [J].