Room-temperature-deposited indium-zinc oxide thin films with controlled conductivity

被引：11

作者：

Lim, Wantae

Wang, Yu-Lin

Ren, F.

Norton, D. P.

Kravchenko, I. I.

Zavada, J. M.

Pearton, S. J. ^{[1
]}

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[3] Univ Florida, Dept Phys, Gainesville, FL 32611 USA

[4] USA, Res Off, Div Elect, Res Triangle Pk, NC 27709 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2007年 / 10卷 / 09期

关键词：

D O I：

10.1149/1.2750441

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The deposition of amorphous indium-zinc oxide (IZO) films by cosputtering from In2O3 and ZnO targets near room temperature was investigated as a function of power, process pressure and oxygen partial pressures in the sputtering ambient. The resistivity of the films with In/Zn ratio between 0.3 and 0.6 could be controlled between 10(-3) and 10(3) Omega cm by varying the oxygen partial pressure. The corresponding electron mobilities were 5-20 cm(2) V-1 s(-1). The optical transmittance of the IZO films was > 70% in all cases. Ohmic contact resistances in the range of 3-8 x 10(-5) Omega cm were obtained with both Ni/Au and Ti/Au deposited by electron beam evaporation. ZnO films deposited under the same conditions always showed evidence of polycrystallinity, while the InZnO films remained amorphous. (c) 2007 The Electrochemical Society.

引用

页码：H267 / H269

页数：3

共 22 条

[1] High-performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition [J].