Seeded self-assembled GaAs quantum dots grown in two-dimensional V grooves by selective metal-organic chemical-vapor deposition

被引：25

作者：

Ishida, S

Arakawa, Y

Wada, K

机构：

[1] Univ Tokyo, Inst Ind Sci, Minato Ku, Tokyo 106, Japan

[2] NTT, Syst Elect Labs, Atsugi, Kanagawa 24301, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 07期

关键词：

D O I：

10.1063/1.120897

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose and demonstrate a seeded self-assembling growth technique for the fabrication of quantum dot structures by metal-organic chemical-vapor deposition. GaAs quantum dots were grown at the bottom of two-dimensional V-groove (2DVG) structures, which were composed of (111)A and (111)B facets on a GaAs(100) substrate. The 2DVG was grown by selective growth on a SiO2 patterned substrate. It was found that vertical GaAs quantum wires were also simultaneously formed in the 2DVGs. Using this technique, the stacking of GaAs quantum dots was realized. Photoluminescence and cathodoluminescence from each structure evidenced the formation of both the quantum wires and the quantum dots. (C) 1998 American Institute of Physics.

引用

收藏

页码：800 / 802

页数：3

相关论文

共 12 条

[1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].

ARAKAWA, Y ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941

[2] QUANTUM NOISE AND DYNAMICS IN QUANTUM WELL AND QUANTUM WIRE LASERS [J].

ARAKAWA, Y ;

VAHALA, K ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1984, 45 (09) :950-952

[3] The role of atomic hydrogen for formation of quantum dots by self-organizing process in MBE [J].

Chun, YJ ;

Nakajima, S ;

Okada, Y ;

Kawabe, M .

PHYSICA B, 1996, 227 (1-4) :299-302

[4] GAAS TETRAHEDRAL QUANTUM DOT STRUCTURES FABRICATED USING SELECTIVE AREA METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

FUKUI, T ;

ANDO, S ;

TOKURA, Y ;

TORIYAMA, T .

APPLIED PHYSICS LETTERS, 1991, 58 (18) :2018-2020

[5] Self-limiting growth of quantum dot heterostructures on nonplanar {111}B substrates [J].

Hartmann, A ;

Loubies, L ;

Reinhardt, F ;

Kapon, E .

APPLIED PHYSICS LETTERS, 1997, 71 (10) :1314-1316

[6] MOLECULAR-BEAM EPITAXY OF GAAS/ALGAAS SUPERLATTICE HETEROSTRUCTURES ON NONPLANAR SUBSTRATES [J].

KAPON, E ;

TAMARGO, MC ;

HWANG, DM .

APPLIED PHYSICS LETTERS, 1987, 50 (06) :347-349

[7] DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].

LEONARD, D ;

KRISHNAMURTHY, M ;

REAVES, CM ;

DENBAARS, SP ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205

[8] GAAS QUANTUM DOTS WITH LATERAL DIMENSION OF 25 NM FABRICATED BY SELECTIVE METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH [J].

NAGAMUNE, Y ;

NISHIOKA, M ;

TSUKAMOTO, S ;

ARAKAWA, Y .

APPLIED PHYSICS LETTERS, 1994, 64 (19) :2495-2497

[9] HIGHLY UNIFORM INGAAS/GAAS QUANTUM DOTS (SIMILAR-TO-15 NM) BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

OSHINOWO, J ;

NISHIOKA, M ;

ISHIDA, S ;

ARAKAWA, Y .

APPLIED PHYSICS LETTERS, 1994, 65 (11) :1421-1423

[10] NOVEL INGAAS/GAAS QUANTUM-DOT STRUCTURES FORMED IN TETRAHEDRAL-SHAPED RECESSES ON (111)B GAAS SUBSTRATE USING METALORGANIC VAPOR-PHASE EPITAXY [J].

SUGIYAMA, Y ;

SAKUMA, Y ;

MUTO, S ;

YOKOYAMA, N .

APPLIED PHYSICS LETTERS, 1995, 67 (02) :256-258