NOVEL INGAAS/GAAS QUANTUM-DOT STRUCTURES FORMED IN TETRAHEDRAL-SHAPED RECESSES ON (111)B GAAS SUBSTRATE USING METALORGANIC VAPOR-PHASE EPITAXY

被引：82

作者：

SUGIYAMA, Y

SAKUMA, Y

MUTO, S

YOKOYAMA, N

机构：

[1] Fujitsu Limited, Atsugi 243-01

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 02期

关键词：

D O I：

10.1063/1.114685

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a novel GaAs/InGaAs/GaAs quantum dot structure formed in a tetrahedral-shaped recess (TSR) patterned on a (111)B GaAs substrate with anisotropic chemical etching. The pseudomorphic heterostructure shows two clear photoluminescence peaks which are attributed to an In anisotropic incorporation on (111)B compared to (111)A. Cathodoluminescence at a lower energy peak with InGaAs of 2.5 nm shows a bright image at the bottom of TSRs which indicates the local minimum in potential energy at the bottom of TSR.© 1995 American Institute of Physics.

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页码：256 / 258

页数：3

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