Relative intensity noise characteristics of injection-locked semiconductor lasers

被引：43

作者：

Jin, X ^{[1
]}

Chuang, SL ^{[1
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 09期

关键词：

D O I：

10.1063/1.1290140

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An experimental and theoretical study of relative intensity noise (RIN) spectra of side-mode injection-locked Fabry-Perot semiconductor lasers is reported. It is shown that the injection-locking technique effectively increases the relaxation oscillation frequency from 4.5 GHz (free-running mode) to 12 GHz (injection-locked mode) and enhances relaxation peaks of the slave laser RIN spectra. Results from our theoretical model, which include the key parameters for semiconductor quantum-well lasers, such as the linewidth enhancement factor, the nonlinear gain saturation coefficients, and optical confinement factor, show good agreement with our experimental results. (C) 2000 American Institute of Physics. [S0003-6951(00)03435-5].

引用

页码：1250 / 1252

页数：3

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