(Ga,Mn)N:Sn epilayers

被引：4

作者：

Kondo, T ^{[1
]}

Owa, H ^{[1
]}

Munekata, H ^{[1
]}

机构：

[1] Tokyo Inst Technol, Imaging Sci & Engn Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

JOURNAL OF SUPERCONDUCTIVITY | 2003年 / 16卷 / 01期

关键词：

diluted magnetic semiconductor; magnetic alloy semiconductor; GaN; RF-plasma assisted molecular beam epitaxy;

D O I：

10.1023/A:1023249104791

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have prepared (Ga, Mn) N : Sn epilayers on sapphire( 0001) substrates by RF-plasma assisted molecular beam epitaxy. We found that codoping with Sn enhances the incorporation of Mn into a GaN host crystal. With increasing the Sn content, the "offset" ferromagnetic magnetization component tends to disappear and the epilayers become completely paramagnetic. The effective spin number is S approximate to 2.5 without Sn, whereas it decreases to S approximate to 2.0 when Sn is incorporated. n-type conduction starts to take place when Sn contents exceed beyond the Mn contents.

引用

收藏

页码：103 / 106

页数：4

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