Growth of highly (100)-oriented Zr-rich PZT thin films on Pt/Ti/SiO2/Si substrates by a simple sol-gel process

被引：21

作者：

Fu, XR ^{[1
]}

Li, JH

Song, ZT

Lin, CL

机构：

[1] Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[2] Jiangsu Inst Petrochem Technol, Funct Mat Lab, Changzhou 213016, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 220卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

lead zirconate titanate; ferroelectricity; pyroelectric; sol-gel;

D O I：

10.1016/S0022-0248(00)00824-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Zr-rich lead zirconate titanate thin films with highly preferential (1 0 0) orientation, PZT80/20 and PZT85/15, and randomly oriented PZT70/30 thin films have been successfully prepared on (1 1 1)Pt-coated Si substrates using the sol-gel process with rapid thermal annealing (RTA) at 700 degreesC for 200 s. The results of X-ray diffraction, including rocking curve measurements, suggest that PZT80/20 and PZT85/15 have a single (1 0 0) orientation with the rocking curve FWHM of around 0.5 degrees. The dielectric properties of each film have been measured as well. The results show that highly (1 0 0)-oriented PZT85/15 films exhibit higher remnant polarization (2P(r) = 41.4 mu /cm(2)) and higher coercive field (2E(c) = 111 kV/cm) than randomly oriented PZT70/30 films (2P(r) = 33.4 muC/cm(2) and 2E(c) = 106 kV/cm, respectively). (C) 2000 Published by Elsevier Science B.V.

引用

页码：82 / 87

页数：6

共 20 条

[1] SPUTTER-DEPOSITION OF [111]-AXIS ORIENTED RHOMBOHEDRAL PZT FILMS AND THEIR DIELECTRIC, FERROELECTRIC AND PYROELECTRIC PROPERTIES [J].