共 36 条
[1]
SCALING OF SI AND GAAS TRENCH ETCH RATES WITH ASPECT RATIO, FEATURE WIDTH, AND SUBSTRATE-TEMPERATURE
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1995, 13 (01)
:92-104
[3]
Bukowski JD., 1996, THESIS U CALIFORNIA
[4]
Kinetic study of low energy argon ion-enhanced plasma etching of polysilicon with atomic/molecular chlorine
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1997, 15 (04)
:1853-1863
[5]
Kinetic study of low energy ion-enhanced polysilicon etching using Cl, Cl-2, and Cl+ beam scattering
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1997, 15 (03)
:610-615
[6]
MOLECULAR-BEAM STUDY OF GAS-SURFACE CHEMISTRY IN THE ION-ASSISTED ETCHING OF SILICON WITH ATOMIC AND MOLECULAR-HYDROGEN AND CHLORINE
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1990, 8 (03)
:1969-1976
[7]
COBURN JL, UNPUB
[8]
A simple optical emission method for measuring percent dissociations of feed gases in plasmas: Application to Cl-2 in a high-density helical resonator plasma
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,
1996, 14 (03)
:1076-1087