Extreme ultraviolet carrier-frequency shearing interferometry of a lithographic four-mirror optical system

被引:64
作者
Naulieau, PP [1 ]
Goldberg, KA
Bokor, J
机构
[1] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Ctr Xray Opt, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 06期
关键词
D O I
10.1116/1.1321290
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The phase-shifting point diffraction interferometer (PS/PDI) has recently been developed to address the problem of at-wavelength metrology of extreme ultraviolet (EUV) optical systems. Although extremely accurate, the fact that the PS/PDI is limited to use with coherent EUV sources, such as undulator radiation, is a drawback for its widespread use. An alternative to the PS/PDI, with relaxed coherence requirements, is lateral shearing interferometry (LSI). Here we describe various LSI implementations and demonstrate the use of a cross-grating, carrier-frequency configuration to characterize a large-field 4X-reduction EUV lithography optic. The results obtained are directly compared with PS/PDI measurements. (C) 2000 American Vacuum Society. [S0734-211X(00)12806-9].
引用
收藏
页码:2939 / 2943
页数:5
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