Performance of new E-beam lithography system JBX-9300FS

New electron beam lithography system, JBX-9300FS, was developed and evaluated. This system features a spot beam, vector beam-scanning system, and step and repeats stage. Minimum beam diameter is 4nm at 100kV and 7nm at 50kV. The beam scanning system incorporates a new 20-bit high resolution-high speed Digital to Analog converter and voltage amplifier (DAC/AMP). Maximum writing field sizes of scanning system are 0.5mm at 100kV with an address size of 1nm and 1.0mm at 50kV with an address size of 2nm. The maximum beam-scanning rate is 25MHz. The system features are a maximum writing area of 230mm square, and handling of 300mm wafers. It also achieves a stitching accuracy and an overlay accuracy of +/-20nm, and a positional accuracy of +/-25nm at an accelerating voltage of 50kV, which exceeded the specifications. This system is used for sub-0.1 mu m gate CMOS device development. Chemically amplified resists, NEB22A3 and UV5 are successfully used for making of 30-nm-width line patterns and 100-nm-diameter via-hole pattern, respectively.