Formation of Si/SiOx interface and its influence on photoluminescence of Si nano-crystallites

被引：2

作者：

Becerril-Espinoza, FG

Torchynska, TV

Rodríguez, MM

Khomenkova, L

Scherbina, LV

机构：

[1] Inst Politecn Nacl, ESFM, Mexico City 07738, DF, Mexico

[2] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-252028 Kiev, Ukraine

来源：

MICROELECTRONICS JOURNAL | 2003年 / 34卷 / 5-8期

关键词：

photoluminescence; nano-structures; porous silicon;

D O I：

10.1016/S0026-2692(03)00120-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photoluminescence (PL), PL excitation and atomic force microscopy investigations of porous silicon (PSi) have been done in as-prepared state and after 1.0 year storage in ambient air. In as-prepared state, Psi layers are characterised by two PL bands peaked at 1.70 and 2.00 eV. The complex analysing of the changes of PL parameters during the formation of the Si/SiOx interface give possibility to make conclusion concerning the PL and PL excitation mechanisms for both PL bands in Si-nano-crystallites. (C) 2003 Elsevier Science Ltd. All rights reserved.

引用

收藏

页码：759 / 761

页数：3

相关论文

共 18 条

[1] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[2] Structural, ellipsometry and photoluminescence spectroscopy studies of silicon nanograins embedded in a silica matrix [J].

Charvet, S ;

Madelon, R ;

Rizk, R .

SOLID-STATE ELECTRONICS, 2001, 45 (08) :1505-1511

[3] Effect of particle size on the photoluminescence from hydrogen passivated Si nanocrystals in SiO2 [J].

Cheylan, S ;

Elliman, RG .

APPLIED PHYSICS LETTERS, 2001, 78 (13) :1912-1914

[4] Size dependence of the luminescence properties in Si nanocrystals [J].

Franzò, G ;

Iacona, F ;

Spinella, C ;

Cammarata, S ;

Grimaldi, MG .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 69 :454-458

[5] Visible photoluminescence of SiO2 implanted with carbon and silicon [J].

Garrido, B ;

Lopez, M ;

Ferre, S ;

RomanoRodriguez, A ;

PerezRodriguez, A ;

Ruterana, P ;

Morante, JR .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 120 (1-4) :101-105

[6] Optical properties of Si clusters and Si nanocrystallites in high-temperature annealed SiOx films [J].

Inokuma, T ;

Wakayama, Y ;

Muramoto, T ;

Aoki, R ;

Kurata, Y ;

Hasegawa, S .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (04) :2228-2234

[7] Photoluminescence mechanism in surface-oxidized silicon nanocrystals [J].

Kanemitsu, Y ;

Okamoto, S ;

Otobe, M ;

Oda, S .

PHYSICAL REVIEW B, 1997, 55 (12) :R7375-R7378

[8] Size-dependent near-infrared photoluminescence spectra of Si nanocrystals embedded in SiO2 matrices [J].

Kanzawa, Y ;

Kageyama, T ;

Takeoka, S ;

Fujii, M ;

Hayashi, S ;

Yamamoto, K .

SOLID STATE COMMUNICATIONS, 1997, 102 (07) :533-537

[9] Suboxide-related centre as the source of the intense red luminescence of porous Si [J].

Korsunskaya, NE ;

Torchinskaya, TV ;

Khomenkova, LY ;

Dzhumaev, BR ;

Prokes, SM .

MICROELECTRONIC ENGINEERING, 2000, 51-2 :485-493

[10] Defect studies in as-deposited and processed nanocrystalline Si/SiO2 structures [J].

Prokes, SM ;

Carlos, WE ;

Veprek, S ;

Ossadnik, C .

PHYSICAL REVIEW B, 1998, 58 (23) :15632-15635